GB/T 17170-2015

Active

Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy

半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法

Standard Type
GBT
ICS
77.040
CCS
H17
Status
Active
Issue Date
2015-12-10
Implementation
2016-07-01
Centralized Committee
国家标准委
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies a test method for measuring the concentration of the EL2 deep donor defect in semi-insulating gallium arsenide (GaAs) single crystals using infrared absorption spectroscopy. It is applied in the metallurgy and semiconductor materials industries for quality control and characterization of GaAs substrates used in high-frequency electronic devices, such as monolithic microwave integrated circuits (MMICs) and optoelectronic components. The method ensures the material's resistivity and uniformity meet the requirements for device fabrication.

Related Standards

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.